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JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY - Vol. 31, No. 4

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1. p. 187 Nanocatalyst Decorated Metal Oxides on Highly Selective Chemical Sensors

Ji-Won Jung, Ji-Soo Jang
DOI: https://doi.org/10.46670/JSST.2022.31.4.187

2. p. 194 Lithium Niobate (LiNbO₃) Photonic Electric-Field Sensors

Hongsik Jung
DOI: https://doi.org/10.46670/JSST.2022.31.4.194

3. p. 214 Influence of Inductively Coupled Oxygen Plasma on the Surface of Poly(ether sulfone)

Do Kyung Lee, Young-Soo Sohn
DOI: https://doi.org/10.46670/JSST.2022.31.4.214

4. p. 218 Interfacial Material Engineering for Enhancing Triboelectric Nanogenerators

Dinh Cong Nguyen, Dukhyun Choi
DOI: https://doi.org/10.46670/JSST.2022.31.4.218

5. p. 228 Solution-Processed Two-Dimensional Materials for Scalable Production of Photodetector Arrays

Dongjoon Rhee, Jihyun Kim, Joohoon Kang
DOI: https://doi.org/10.46670/JSST.2022.31.4.228

6. p. 238 Enhancing Performance of 1-aminopyrene Light-Emitting Diodes via Hybridization with ZnO Quantum Dots

Jong Hyun Choi, Hong Hee Kim, Won Kook Choi
DOI: https://doi.org/10.46670/JSST.2022.31.4.238

7. p. 244 Fabrication of a Porous Carbon Surface Using Ethanol Vapor Treatment

Doyeon Im, Geon Hwee Kim, Taechang An
DOI: https://doi.org/10.46670/JSST.2022.31.4.244

8. p. 249 Light-emitting Diodes based on a Densely Packed QD Film Deposited by the Langmuir-Blodgett Technique

Seunghyun Rhee, Byeong Guk Jeong, Jeongkyun Roh
DOI: https://doi.org/10.46670/JSST.2022.31.4.249

9. p. 255 Design and Analysis of Optical Properties of Anti-reflection Coated ZnS Substrates in the Mid-infrared Region

Buem Keun Park, Jong-Hoo Paik
DOI: https://doi.org/10.46670/JSST.2022.31.4.255

10. p. 260 Hyper-elastic Model Haptic Feedback Using Finite Element Analysis

Seunghyun Park, Jinhyun Kim
DOI: https://doi.org/10.46670/JSST.2022.31.4.260

11. p. 266 Long Distance Identification of Water and Oil using an Ultraviolet Fluorescence Measurement System

Kyung-hoon Baek, Joon-seok Lee, Su-jeong Jeon, Bo-ram Park, Seong-wook Park
DOI: https://doi.org/10.46670/JSST.2022.31.4.266

12. p. 271 Interface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET

Byeong-Jun Park, Han-Sol Kim, Sung-Ho Hahm
DOI: https://doi.org/10.46670/JSST.2022.31.4.271

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